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    • A Fast Developed Electronic Components Distributor
    HGT1S10N120BNST, onsemi, Discrete Semiconductor Products~Transistors - IGBTs - Single, IGBT 1200V 35A 298W TO263AB
    HGT1S10N120BNST Images
    HGT1S10N120BNST Images
    Product Attributes：
  • Part Number: HGT1S10N120BNST
  • Manufacturer: onsemi
  • Description: IGBT 1200V 35A 298W TO263AB
  • Category: Discrete Semiconductor Products~Transistors - IGBTs - Single
  • HGT1S10N120BNST Datasheet (PDF)
  • Order with confidence, there are no lead times for in-stock products.
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    Product Specifications：
  • MfrPart.: HGT1S10N120BNST
  • Mfr: onsemi
  • Description: IGBT 1200V 35A 298W TO263AB
  • Product Category: Discrete Semiconductor Products~Transistors - IGBTs - Single
  • Package: Tape & Reel (TR),Cut Tape (CT)
  • Series: -
  • PartStatus: Active
  • IGBTType: NPT
  • Voltage-CollectorEmitterBreakdown(Max): 1200 V
  • Current-Collector(Ic)(Max): 35 A
  • Current-CollectorPulsed(Icm): 80 A
  • Vce(on)(Max)@VgeIc: 2.7V @ 15V, 10A
  • Power-Max: 298 W
  • SwitchingEnergy: 320µJ (on), 800µJ (off)
  • InputType: Standard
  • GateCharge: 100 nC
  • Td(on/off)@25°C: 23ns/165ns
  • TestCondition: 960V, 10A, 10Ohm, 15V
  • ReverseRecoveryTime(trr): -
  • OperatingTemperature: -55°C ~ 150°C (TJ)
  • MountingType: Surface Mount
  • Package/Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • HGT1S10N120BNST | onsemi | NHE Electronics
    • HGT1S10N120BNST were obtained directly from authorized onsemi distributors and other trusted sources throughout the world.
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