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NGB8207ABNT4G, onsemi, Discrete Semiconductor Products~Transistors - IGBTs - Single, INSULATED GATE BIPOLAR TRANSISTO
NGB8207ABNT4G Images
NGB8207ABNT4G Images
Product Attributes:
  • Part Number: NGB8207ABNT4G
  • Manufacturer: onsemi
  • Description: INSULATED GATE BIPOLAR TRANSISTO
  • Category: Discrete Semiconductor Products~Transistors - IGBTs - Single
  • NGB8207ABNT4G Datasheet (PDF)
  • Order with confidence, there are no lead times for in-stock products.
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    Product Specifications:
  • MfrPart.: NGB8207ABNT4G
  • Mfr: onsemi
  • Description: INSULATED GATE BIPOLAR TRANSISTO
  • Product Category: Discrete Semiconductor Products~Transistors - IGBTs - Single
  • Package: Bulk
  • Series: -
  • PartStatus: Active
  • IGBTType: -
  • Voltage-CollectorEmitterBreakdown(Max): 365 V
  • Current-Collector(Ic)(Max): 20 A
  • Current-CollectorPulsed(Icm): 50 A
  • Vce(on)(Max)@VgeIc: 2.2V @ 3.7V, 10A
  • Power-Max: 165 W
  • SwitchingEnergy: -
  • InputType: Logic
  • GateCharge: -
  • Td(on/off)@25°C: -
  • TestCondition: -
  • ReverseRecoveryTime(trr): -
  • OperatingTemperature: -55°C ~ 175°C (TJ)
  • MountingType: Surface Mount
  • Package/Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • NGB8207ABNT4G | onsemi | NHE Electronics
  • NGB8207ABNT4G were obtained directly from authorized onsemi distributors and other trusted sources throughout the world.
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