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NGB8207ABNT4G, onsemi, Discrete Semiconductor Products~Transistors - IGBTs - Single, INSULATED GATE BIPOLAR TRANSISTO
Product Attributes:
Part Number: NGB8207ABNT4G
Manufacturer: onsemi
Description: INSULATED GATE BIPOLAR TRANSISTO
Category: Discrete Semiconductor Products~Transistors - IGBTs - Single
NGB8207ABNT4G Datasheet (PDF)
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Product Specifications:
MfrPart.: NGB8207ABNT4GMfr: onsemiDescription: INSULATED GATE BIPOLAR TRANSISTOProduct Category: Discrete Semiconductor Products~Transistors - IGBTs - SinglePackage: BulkSeries: -PartStatus: ActiveIGBTType: -Voltage-CollectorEmitterBreakdown(Max): 365 VCurrent-Collector(Ic)(Max): 20 ACurrent-CollectorPulsed(Icm): 50 AVce(on)(Max)@VgeIc: 2.2V @ 3.7V, 10APower-Max: 165 WSwitchingEnergy: -InputType: LogicGateCharge: -Td(on/off)@25°C: -TestCondition: -ReverseRecoveryTime(trr): -OperatingTemperature: -55°C ~ 175°C (TJ)MountingType: Surface MountPackage/Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263ABNGB8207ABNT4G | onsemi | NHE Electronics
NGB8207ABNT4G were obtained directly from authorized onsemi distributors and other trusted sources throughout the world.