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    DDTD114GC-7-F, Diodes Incorporated, Discrete Semiconductor Products~Transistors - Bipolar (BJT) - Single, Pre-Biased, TRANS PREBIAS NPN 200MW SOT23-3
    DDTD114GC-7-F Images
    DDTD114GC-7-F Images
    Product Attributes：
  • Part Number: DDTD114GC-7-F
  • Manufacturer: Diodes Incorporated
  • Description: TRANS PREBIAS NPN 200MW SOT23-3
  • Category: Discrete Semiconductor Products~Transistors - Bipolar (BJT) - Single, Pre-Biased
  • DDTD114GC-7-F Datasheet (PDF)
  • Order with confidence, there are no lead times for in-stock products.
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    Product Specifications：
  • MfrPart.: DDTD114GC-7-F
  • Mfr: Diodes Incorporated
  • Description: TRANS PREBIAS NPN 200MW SOT23-3
  • Product Category: Discrete Semiconductor Products~Transistors - Bipolar (BJT) - Single, Pre-Biased
  • Package: Tape & Reel (TR)
  • Series: -
  • PartStatus: Last Time Buy
  • TransistorType: NPN - Pre-Biased
  • Current-Collector(Ic)(Max): 500 mA
  • Voltage-CollectorEmitterBreakdown(Max): 50 V
  • Resistor-Base(R1): -
  • Resistor-EmitterBase(R2): 10 kOhms
  • DCCurrentGain(hFE)(Min)@IcVce: 56 @ 50mA, 5V
  • VceSaturation(Max)@IbIc: 300mV @ 2.5mA, 50mA
  • Current-CollectorCutoff(Max): 500nA (ICBO)
  • Frequency-Transition: 200 MHz
  • Power-Max: 200 mW
  • MountingType: Surface Mount
  • Package/Case: TO-236-3, SC-59, SOT-23-3
  • DDTD114GC-7-F | Diodes Incorporated | NHE Electronics
    • DDTD114GC-7-F were obtained directly from authorized Diodes Incorporated distributors and other trusted sources throughout the world.
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