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DMG4N60SJ3, Diodes Incorporated, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 600V 3A TO251
Product Attributes:
Part Number: DMG4N60SJ3
Manufacturer: Diodes Incorporated
Description: MOSFET N-CH 600V 3A TO251
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
DMG4N60SJ3 Datasheet (PDF)
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Product Specifications:
MfrPart.: DMG4N60SJ3Mfr: Diodes IncorporatedDescription: MOSFET N-CH 600V 3A TO251Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: TubeSeries: -PartStatus: ObsoleteFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 600 VCurrent-ContinuousDrain(Id)@25°C: 3A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 10VRdsOn(Max)@IdVgs: 2.5Ohm @ 2A, 10VVgs(th)(Max)@Id: 4.5V @ 250µAGateCharge(Qg)(Max)@Vgs: 14.3 nC @ 10 VVgs(Max): ±30VInputCapacitance(Ciss)(Max)@Vds: 532 pF @ 25 VFETFeature: -PowerDissipation(Max): 41W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Through HoleSupplierDevicePackage: TO-251DMG4N60SJ3 | Diodes Incorporated | NHE Electronics
DMG4N60SJ3 were obtained directly from authorized Diodes Incorporated distributors and other trusted sources throughout the world.