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    DXTN10060DFJBWQ-7, Diodes Incorporated, Discrete Semiconductor Products~Transistors - Bipolar (BJT) - Single, SS LOW SAT TRANSISTOR W-DFN2020-
    DXTN10060DFJBWQ-7 Images
    DXTN10060DFJBWQ-7 Images
    Product Attributes：
  • Part Number: DXTN10060DFJBWQ-7
  • Manufacturer: Diodes Incorporated
  • Description: SS LOW SAT TRANSISTOR W-DFN2020-
  • Category: Discrete Semiconductor Products~Transistors - Bipolar (BJT) - Single
  • DXTN10060DFJBWQ-7 Datasheet (PDF)
  • Order with confidence, there are no lead times for in-stock products.
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    Product Specifications：
  • MfrPart.: DXTN10060DFJBWQ-7
  • Mfr: Diodes Incorporated
  • Description: SS LOW SAT TRANSISTOR W-DFN2020-
  • Product Category: Discrete Semiconductor Products~Transistors - Bipolar (BJT) - Single
  • Package: Tape & Reel (TR),Cut Tape (CT)
  • Series: Automotive, AEC-Q101
  • PartStatus: Active
  • TransistorType: NPN
  • Current-Collector(Ic)(Max): 4 A
  • Voltage-CollectorEmitterBreakdown(Max): 60 V
  • VceSaturation(Max)@IbIc: 320mV @ 200mA, 4A
  • Current-CollectorCutoff(Max): 100nA
  • DCCurrentGain(hFE)(Min)@IcVce: 340 @ 200mA, 2V
  • Power-Max: 1.8 W
  • Frequency-Transition: 125MHz
  • OperatingTemperature: -55°C ~ 175°C (TJ)
  • MountingType: Surface Mount
  • Package/Case: 3-UDFN Exposed Pad
  • DXTN10060DFJBWQ-7 | Diodes Incorporated | NHE Electronics
    • DXTN10060DFJBWQ-7 were obtained directly from authorized Diodes Incorporated distributors and other trusted sources throughout the world.
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