Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
BCR133WE6327HTSA1, Infineon, Discrete Semiconductor Products~Transistors - Bipolar (BJT) - Single, Pre-Biased, TRANS PREBIAS NPN 250MW SOT323-3
Product Attributes：
Part Number: BCR133WE6327HTSA1
Manufacturer: Infineon
Description: TRANS PREBIAS NPN 250MW SOT323-3
Category: Discrete Semiconductor Products~Transistors - Bipolar (BJT) - Single, Pre-Biased
BCR133WE6327HTSA1 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Infineon, you may also be interested in the following:
MOSFET P-CH 60V 8.8A TO220-3
IGBT 1200V 45A 200W TO247AC
MOSFET N-CH 500V 17A TO220-FP
RF TX IC ASK 315/434MHZ 38TFSOP
MOSFET P-CH 30V 5.5A TSOP-6
IKW50N60 - AUTOMOTIVE IGBT DISCR
Product Specifications：
MfrPart.: BCR133WE6327HTSA1Mfr: Infineon TechnologiesDescription: TRANS PREBIAS NPN 250MW SOT323-3Product Category: Discrete Semiconductor Products~Transistors - Bipolar (BJT) - Single, Pre-BiasedPackage: Tape & Reel (TR)Series: -PartStatus: ObsoleteTransistorType: NPN - Pre-BiasedCurrent-Collector(Ic)(Max): 100 mAVoltage-CollectorEmitterBreakdown(Max): 50 VResistor-Base(R1): 10 kOhmsResistor-EmitterBase(R2): 10 kOhmsDCCurrentGain(hFE)(Min)@IcVce: 30 @ 5mA, 5VVceSaturation(Max)@IbIc: 300mV @ 500µA, 10mACurrent-CollectorCutoff(Max): 100nA (ICBO)Frequency-Transition: 130 MHzPower-Max: 250 mWMountingType: Surface MountPackage/Case: SC-70, SOT-323BCR133WE6327HTSA1 | Infineon | NHE Electronics
BCR133WE6327HTSA1 were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.
