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BFR181E6327, Infineon, Discrete Semiconductor Products~Transistors - Bipolar (BJT) - RF, LOW-NOISE TRANSISTOR
Product Attributes：
Part Number: BFR181E6327
Manufacturer: Infineon
Description: LOW-NOISE TRANSISTOR
Category: Discrete Semiconductor Products~Transistors - Bipolar (BJT) - RF
BFR181E6327 Datasheet (PDF)
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Product Specifications：
MfrPart.: BFR181E6327Mfr: Infineon TechnologiesDescription: LOW-NOISE TRANSISTORProduct Category: Discrete Semiconductor Products~Transistors - Bipolar (BJT) - RFPackage: BulkSeries: -PartStatus: ActiveTransistorType: NPNVoltage-CollectorEmitterBreakdown(Max): 12VFrequency-Transition: 8GHzNoiseFigure(dBTyp@f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHzGain: 18.5dBPower-Max: 175mWDCCurrentGain(hFE)(Min)@IcVce: 70 @ 5mA, 8VCurrent-Collector(Ic)(Max): 20mAOperatingTemperature: 150°C (TJ)MountingType: Surface MountPackage/Case: TO-236-3, SC-59, SOT-23-3BFR181E6327 | Infineon | NHE Electronics
BFR181E6327 were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.
