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BSM10GD120DN2E3224BOSA1, Infineon, Discrete Semiconductor Products~Transistors - IGBTs - Modules, IGBT MODULE 1200V 15A 80W
BSM10GD120DN2E3224BOSA1 Images
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Product Specifications:
MfrPart.: BSM10GD120DN2E3224BOSA1Mfr: Infineon TechnologiesDescription: IGBT MODULE 1200V 15A 80WProduct Category: Discrete Semiconductor Products~Transistors - IGBTs - ModulesPackage: TraySeries: -PartStatus: Last Time BuyIGBTType: -Configuration: Full BridgeVoltage-CollectorEmitterBreakdown(Max): 1200 VCurrent-Collector(Ic)(Max): 15 APower-Max: 80 WVce(on)(Max)@VgeIc: 3.2V @ 15V, 10ACurrent-CollectorCutoff(Max): 400 µAInputCapacitance(Cies)@Vce: 530 pF @ 25 VInput: StandardNTCThermistor: NoOperatingTemperature: 150°C (TJ)MountingType: Chassis MountPackage/Case: ModuleBSM10GD120DN2E3224BOSA1 | Infineon | NHE Electronics
BSM10GD120DN2E3224BOSA1 were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.