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BSM50GD120DN2E3226BOSA1, Infineon, Discrete Semiconductor Products~Transistors - IGBTs - Modules, IGBT MOD 1200V 50A 350W
BSM50GD120DN2E3226BOSA1 Images
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Product Specifications:
MfrPart.: BSM50GD120DN2E3226BOSA1Mfr: Infineon TechnologiesDescription: IGBT MOD 1200V 50A 350WProduct Category: Discrete Semiconductor Products~Transistors - IGBTs - ModulesPackage: TraySeries: -PartStatus: Not For New DesignsIGBTType: -Configuration: Three Phase InverterVoltage-CollectorEmitterBreakdown(Max): 1200 VCurrent-Collector(Ic)(Max): 50 APower-Max: 350 WVce(on)(Max)@VgeIc: 3V @ 15V, 50ACurrent-CollectorCutoff(Max): 1 mAInputCapacitance(Cies)@Vce: 3.3 nF @ 25 VInput: StandardNTCThermistor: NoOperatingTemperature: 150°C (TJ)MountingType: Chassis MountPackage/Case: ModuleBSM50GD120DN2E3226BOSA1 | Infineon | NHE Electronics
BSM50GD120DN2E3226BOSA1 were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.