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    BSM75GB170DN2HOSA1, Infineon, Discrete Semiconductor Products~Transistors - IGBTs - Modules, IGBT, 110A I(C), 1700V V(BR)CES
    BSM75GB170DN2HOSA1 Images
    BSM75GB170DN2HOSA1 Images
    Product Attributes：
  • Part Number: BSM75GB170DN2HOSA1
  • Manufacturer: Infineon
  • Description: IGBT, 110A I(C), 1700V V(BR)CES
  • Category: Discrete Semiconductor Products~Transistors - IGBTs - Modules
  • BSM75GB170DN2HOSA1 Datasheet (PDF)
  • Order with confidence, there are no lead times for in-stock products.
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    Product Specifications：
  • MfrPart.: BSM75GB170DN2HOSA1
  • Mfr: Infineon Technologies
  • Description: IGBT, 110A I(C), 1700V V(BR)CES
  • Product Category: Discrete Semiconductor Products~Transistors - IGBTs - Modules
  • Package: 4
  • Series: Bulk
  • PartStatus: -
  • IGBTType: Active
  • Configuration: -
  • Voltage-CollectorEmitterBreakdown(Max): Half Bridge
  • Current-Collector(Ic)(Max): 1.7 V
  • Power-Max: 110 A
  • Vce(on)(Max)@VgeIc: 625 W
  • Current-CollectorCutoff(Max): 3.9V @ 15V, 75A
  • InputCapacitance(Cies)@Vce: -
  • Input: 11 nF @ 25 V
  • NTCThermistor: Standard
  • OperatingTemperature: No
  • MountingType: 150°C (TJ)
  • Package/Case: Chassis Mount
  • BSM75GB170DN2HOSA1 | Infineon | NHE Electronics
    • BSM75GB170DN2HOSA1 were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.
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