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F423MR12W1M1B11BOMA1, Infineon, Discrete Semiconductor Products~Transistors - IGBTs - Modules, LOW POWER EASY
F423MR12W1M1B11BOMA1 Images
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Product Specifications:
MfrPart.: F423MR12W1M1B11BOMA1Mfr: Infineon TechnologiesDescription: LOW POWER EASYProduct Category: Discrete Semiconductor Products~Transistors - IGBTs - ModulesPackage: TraySeries: -PartStatus: ActiveIGBTType: TrenchConfiguration: Full BridgeVoltage-CollectorEmitterBreakdown(Max): 1200 VCurrent-Collector(Ic)(Max): 50 APower-Max: 0.2 WVce(on)(Max)@VgeIc: -Current-CollectorCutoff(Max): -InputCapacitance(Cies)@Vce: 3.68 nF @ 800 VInput: StandardNTCThermistor: YesOperatingTemperature: -40°C ~ 150°C (TJ)MountingType: Chassis MountPackage/Case: ModuleF423MR12W1M1B11BOMA1 | Infineon | NHE Electronics
F423MR12W1M1B11BOMA1 were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.