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FS200R07N3E4RB11BOSA1, Infineon, Discrete Semiconductor Products~Transistors - IGBTs - Modules, IGBT MOD 650V 200A 600W
FS200R07N3E4RB11BOSA1 Images
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Product Specifications:
MfrPart.: FS200R07N3E4RB11BOSA1Mfr: Infineon TechnologiesDescription: IGBT MOD 650V 200A 600WProduct Category: Discrete Semiconductor Products~Transistors - IGBTs - ModulesPackage: BulkSeries: -PartStatus: ActiveIGBTType: Trench Field StopConfiguration: Three Phase InverterVoltage-CollectorEmitterBreakdown(Max): 650 VCurrent-Collector(Ic)(Max): 200 APower-Max: 600 WVce(on)(Max)@VgeIc: 1.95V @ 15V, 200ACurrent-CollectorCutoff(Max): 1 mAInputCapacitance(Cies)@Vce: 13 nF @ 25 VInput: StandardNTCThermistor: YesOperatingTemperature: -40°C ~ 150°CMountingType: Chassis MountPackage/Case: ModuleFS200R07N3E4RB11BOSA1 | Infineon | NHE Electronics
FS200R07N3E4RB11BOSA1 were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.