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    IFS100B12N3E4B31BOSA1, Infineon, Discrete Semiconductor Products~Transistors - IGBTs - Modules, IGBT MOD 1200V 200A 515W
    IFS100B12N3E4B31BOSA1 Images
    IFS100B12N3E4B31BOSA1 Images
    Product Attributes：
  • Part Number: IFS100B12N3E4B31BOSA1
  • Manufacturer: Infineon
  • Description: IGBT MOD 1200V 200A 515W
  • Category: Discrete Semiconductor Products~Transistors - IGBTs - Modules
  • IFS100B12N3E4B31BOSA1 Datasheet (PDF)
  • Order with confidence, there are no lead times for in-stock products.
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    Product Specifications：
  • MfrPart.: IFS100B12N3E4B31BOSA1
  • Mfr: Infineon Technologies
  • Description: IGBT MOD 1200V 200A 515W
  • Product Category: Discrete Semiconductor Products~Transistors - IGBTs - Modules
  • Package: Tray
  • Series: -
  • PartStatus: Active
  • IGBTType: Trench Field Stop
  • Configuration: Full Bridge
  • Voltage-CollectorEmitterBreakdown(Max): 1200 V
  • Current-Collector(Ic)(Max): 200 A
  • Power-Max: 515 W
  • Vce(on)(Max)@VgeIc: 2.1V @ 15V, 100A
  • Current-CollectorCutoff(Max): 1 mA
  • InputCapacitance(Cies)@Vce: 6.3 nF @ 25 V
  • Input: Standard
  • NTCThermistor: Yes
  • OperatingTemperature: -40°C ~ 150°C
  • MountingType: Chassis Mount
  • Package/Case: Module
  • IFS100B12N3E4B31BOSA1 | Infineon | NHE Electronics
    • IFS100B12N3E4B31BOSA1 were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.
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