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    IPB096N03LGATMA1, Infineon, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 30V 35A D2PAK
    IPB096N03LGATMA1 Images
    IPB096N03LGATMA1 Images
    Product Attributes：
  • Part Number: IPB096N03LGATMA1
  • Manufacturer: Infineon
  • Description: MOSFET N-CH 30V 35A D2PAK
  • Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
  • IPB096N03LGATMA1 Datasheet (PDF)
  • Order with confidence, there are no lead times for in-stock products.
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    Product Specifications：
  • MfrPart.: IPB096N03LGATMA1
  • Mfr: Infineon Technologies
  • Description: MOSFET N-CH 30V 35A D2PAK
  • Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
  • Package: Bulk
  • Series: OptiMOS™
  • PartStatus: Obsolete
  • FETType: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • DraintoSourceVoltage(Vdss): 30 V
  • Current-ContinuousDrain(Id)@25°C: 35A (Tc)
  • DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10V
  • RdsOn(Max)@IdVgs: 9.6mOhm @ 30A, 10V
  • Vgs(th)(Max)@Id: 2.2V @ 250µA
  • GateCharge(Qg)(Max)@Vgs: 15 nC @ 10 V
  • Vgs(Max): ±20V
  • InputCapacitance(Ciss)(Max)@Vds: 1.6 pF @ 15 V
  • FETFeature: -
  • PowerDissipation(Max): 42W (Tc)
  • OperatingTemperature: -55°C ~ 175°C (TJ)
  • MountingType: Surface Mount
  • SupplierDevicePackage: PG-TO263-3
  • IPB096N03LGATMA1 | Infineon | NHE Electronics
    • IPB096N03LGATMA1 were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.
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