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IPB80N06S2H5ATMA1, Infineon, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 55V 80A TO263-3-2
Product Attributes：
Part Number: IPB80N06S2H5ATMA1
Manufacturer: Infineon
Description: MOSFET N-CH 55V 80A TO263-3-2
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
IPB80N06S2H5ATMA1 Datasheet (PDF)
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Product Specifications：
MfrPart.: IPB80N06S2H5ATMA1Mfr: Infineon TechnologiesDescription: MOSFET N-CH 55V 80A TO263-3-2Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: BulkSeries: OptiMOS™PartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 55 VCurrent-ContinuousDrain(Id)@25°C: 80A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 10VRdsOn(Max)@IdVgs: 5.2mOhm @ 80A, 10VVgs(th)(Max)@Id: 4V @ 230µAGateCharge(Qg)(Max)@Vgs: 155 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 4.4 pF @ 25 VFETFeature: -PowerDissipation(Max): 300W (Tc)OperatingTemperature: -55°C ~ 175°C (TJ)MountingType: Surface MountSupplierDevicePackage: PG-TO263-3-2IPB80N06S2H5ATMA1 | Infineon | NHE Electronics
IPB80N06S2H5ATMA1 were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.
