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    • A Fast Developed Electronic Components Distributor
    IPD12CNE8N G, Infineon, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 85V 67A TO252-3
    IPD12CNE8N G Images
    IPD12CNE8N G Images
    Product Attributes：
  • Part Number: IPD12CNE8N G
  • Manufacturer: Infineon
  • Description: MOSFET N-CH 85V 67A TO252-3
  • Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
  • IPD12CNE8N G Datasheet (PDF)
  • Order with confidence, there are no lead times for in-stock products.
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    Product Specifications：
  • MfrPart.: IPD12CNE8N G
  • Mfr: Infineon Technologies
  • Description: MOSFET N-CH 85V 67A TO252-3
  • Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
  • Package: Tape & Reel (TR)
  • Series: OptiMOS™
  • PartStatus: Obsolete
  • FETType: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • DraintoSourceVoltage(Vdss): 85 V
  • Current-ContinuousDrain(Id)@25°C: 67A (Tc)
  • DriveVoltage(MaxRdsOnMinRdsOn): 10V
  • RdsOn(Max)@IdVgs: 12.4mOhm @ 67A, 10V
  • Vgs(th)(Max)@Id: 4V @ 83µA
  • GateCharge(Qg)(Max)@Vgs: 64 nC @ 10 V
  • Vgs(Max): ±20V
  • InputCapacitance(Ciss)(Max)@Vds: 4340 pF @ 40 V
  • FETFeature: -
  • PowerDissipation(Max): 125W (Tc)
  • OperatingTemperature: -55°C ~ 175°C (TJ)
  • MountingType: Surface Mount
  • SupplierDevicePackage: PG-TO252-3
  • IPD12CNE8N G | Infineon | NHE Electronics
    • IPD12CNE8N G were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.
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