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    IPD33CN10NGBUMA1, Infineon, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 100V 27A TO252-3
    IPD33CN10NGBUMA1 Images
    IPD33CN10NGBUMA1 Images
    Product Attributes：
  • Part Number: IPD33CN10NGBUMA1
  • Manufacturer: Infineon
  • Description: MOSFET N-CH 100V 27A TO252-3
  • Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
  • IPD33CN10NGBUMA1 Datasheet (PDF)
  • Order with confidence, there are no lead times for in-stock products.
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    Product Specifications：
  • MfrPart.: IPD33CN10NGBUMA1
  • Mfr: Infineon Technologies
  • Description: MOSFET N-CH 100V 27A TO252-3
  • Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
  • Package: Tape & Reel (TR)
  • Series: OptiMOS™
  • PartStatus: Obsolete
  • FETType: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • DraintoSourceVoltage(Vdss): 100 V
  • Current-ContinuousDrain(Id)@25°C: 27A (Tc)
  • DriveVoltage(MaxRdsOnMinRdsOn): 10V
  • RdsOn(Max)@IdVgs: 33mOhm @ 27A, 10V
  • Vgs(th)(Max)@Id: 4V @ 29µA
  • GateCharge(Qg)(Max)@Vgs: 24 nC @ 10 V
  • Vgs(Max): ±20V
  • InputCapacitance(Ciss)(Max)@Vds: 1570 pF @ 50 V
  • FETFeature: -
  • PowerDissipation(Max): 58W (Tc)
  • OperatingTemperature: -55°C ~ 175°C (TJ)
  • MountingType: Surface Mount
  • SupplierDevicePackage: PG-TO252-3
  • IPD33CN10NGBUMA1 | Infineon | NHE Electronics
    • IPD33CN10NGBUMA1 were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.
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