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IPN60R2K0PFD7SATMA1, Infineon, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 650V 3A SOT223
IPN60R2K0PFD7SATMA1 Images
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Product Specifications:
MfrPart.: IPN60R2K0PFD7SATMA1Mfr: Infineon TechnologiesDescription: MOSFET N-CH 650V 3A SOT223Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: CoolMOS™PFD7PartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 650 VCurrent-ContinuousDrain(Id)@25°C: 3A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 10VRdsOn(Max)@IdVgs: 2Ohm @ 500mA, 10VVgs(th)(Max)@Id: 4.5V @ 30µAGateCharge(Qg)(Max)@Vgs: 3.8 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 134 pF @ 400 VFETFeature: -PowerDissipation(Max): 6W (Tc)OperatingTemperature: -40°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PG-SOT223IPN60R2K0PFD7SATMA1 | Infineon | NHE Electronics
IPN60R2K0PFD7SATMA1 were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.