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2N3501E3, Microchip Technology, Discrete Semiconductor Products~Transistors - Bipolar (BJT) - Single, NPN POWER SILICON TRANSISTORS
2N3501E3 Images
2N3501E3 Images
Product Attributes:
  • Part Number: 2N3501E3
  • Manufacturer: Microchip Technology
  • Description: NPN POWER SILICON TRANSISTORS
  • Category: Discrete Semiconductor Products~Transistors - Bipolar (BJT) - Single
  • 2N3501E3 Datasheet (PDF)
  • Order with confidence, there are no lead times for in-stock products.
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    Product Specifications:
  • MfrPart.: 2N3501E3
  • Mfr: Microchip Technology
  • Description: NPN POWER SILICON TRANSISTORS
  • Product Category: Discrete Semiconductor Products~Transistors - Bipolar (BJT) - Single
  • Package: Bulk
  • Series: -
  • PartStatus: Active
  • TransistorType: NPN
  • Current-Collector(Ic)(Max): 300 mA
  • Voltage-CollectorEmitterBreakdown(Max): 150 V
  • VceSaturation(Max)@IbIc: 400mV @ 15mA, 150mA
  • Current-CollectorCutoff(Max): 10µA (ICBO)
  • DCCurrentGain(hFE)(Min)@IcVce: 100 @ 150mA, 10V
  • Power-Max: 500 mW
  • Frequency-Transition: -
  • OperatingTemperature: -65°C ~ 200°C (TJ)
  • MountingType: Through Hole
  • Package/Case: TO-205AD, TO-39-3 Metal Can
  • 2N3501E3 | Microchip Technology | NHE Electronics
  • 2N3501E3 were obtained directly from authorized Microchip Technology distributors and other trusted sources throughout the world.
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