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    APT33GF120B2RDQ2G, Microchip Technology, Discrete Semiconductor Products~Transistors - IGBTs - Single, IGBT 1200V 64A 357W TMAX
    APT33GF120B2RDQ2G Images
    APT33GF120B2RDQ2G Images
    Product Attributes：
  • Part Number: APT33GF120B2RDQ2G
  • Manufacturer: Microchip Technology
  • Description: IGBT 1200V 64A 357W TMAX
  • Category: Discrete Semiconductor Products~Transistors - IGBTs - Single
  • APT33GF120B2RDQ2G Datasheet (PDF)
  • Order with confidence, there are no lead times for in-stock products.
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    Product Specifications：
  • MfrPart.: APT33GF120B2RDQ2G
  • Mfr: Microchip Technology
  • Description: IGBT 1200V 64A 357W TMAX
  • Product Category: Discrete Semiconductor Products~Transistors - IGBTs - Single
  • Package: Tube
  • Series: -
  • PartStatus: Active
  • IGBTType: NPT
  • Voltage-CollectorEmitterBreakdown(Max): 1200 V
  • Current-Collector(Ic)(Max): 64 A
  • Current-CollectorPulsed(Icm): 75 A
  • Vce(on)(Max)@VgeIc: 3V @ 15V, 25A
  • Power-Max: 357 W
  • SwitchingEnergy: 1.315mJ (on), 1.515mJ (off)
  • InputType: Standard
  • GateCharge: 170 nC
  • Td(on/off)@25°C: 14ns/185ns
  • TestCondition: 800V, 25A, 4.3Ohm, 15V
  • ReverseRecoveryTime(trr): -
  • OperatingTemperature: -55°C ~ 150°C (TJ)
  • MountingType: Through Hole
  • Package/Case: TO-247-3 Variant
  • APT33GF120B2RDQ2G | Microchip Technology | NHE Electronics
    • APT33GF120B2RDQ2G were obtained directly from authorized Microchip Technology distributors and other trusted sources throughout the world.
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