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    JAN1N5809US, Microchip Technology, Discrete Semiconductor Products~Diodes - Rectifiers - Single, DIODE GEN PURP 100V 6A B-MELF
    JAN1N5809US Images
    JAN1N5809US Images
    Product Attributes：
  • Part Number: JAN1N5809US
  • Manufacturer: Microchip Technology
  • Description: DIODE GEN PURP 100V 6A B-MELF
  • Category: Discrete Semiconductor Products~Diodes - Rectifiers - Single
  • JAN1N5809US Datasheet (PDF)
  • Order with confidence, there are no lead times for in-stock products.
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    Product Specifications：
  • Manufacturer Product Number: JAN1N5809US
  • Mfr: Microchip Technology
  • Detailed Description: DIODE GEN PURP 100V 6A B-MELF
  • Product Category: Discrete Semiconductor Products~Diodes - Rectifiers - Single
  • Package: Bulk
  • Series: Military, MIL-PRF-19500/477
  • Part Status: Active
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 100 V
  • Capacitance @ Vr, F: 60pF @ 10V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SQ-MELF, B
  • Operating Temperature - Junction: -65°C ~ 175°C
  • JAN1N5809US | Microchip Technology | NHE Electronics
    • JAN1N5809US were obtained directly from authorized Microchip Technology distributors and other trusted sources throughout the world.
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