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JANSP2N3636UB/TR, Microchip Technology, Discrete Semiconductor Products~Transistors - Bipolar (BJT) - Single, NPN TRANSISTOR
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Product Specifications:
MfrPart.: JANSP2N3636UB/TRMfr: Microchip TechnologyDescription: NPN TRANSISTORProduct Category: Discrete Semiconductor Products~Transistors - Bipolar (BJT) - SinglePackage: BulkSeries: Military, MIL-PRF-19500/357PartStatus: ActiveTransistorType: PNPCurrent-Collector(Ic)(Max): 10 µAVoltage-CollectorEmitterBreakdown(Max): 175 VVceSaturation(Max)@IbIc: 600mV @ 5mA, 50mACurrent-CollectorCutoff(Max): 10µADCCurrentGain(hFE)(Min)@IcVce: 50 @ 50mA, 10VPower-Max: 1.5 WFrequency-Transition: -OperatingTemperature: -65°C ~ 200°C (TJ)MountingType: Surface MountPackage/Case: 4-SMD, No LeadJANSP2N3636UB/TR | Microchip Technology | NHE Electronics
JANSP2N3636UB/TR were obtained directly from authorized Microchip Technology distributors and other trusted sources throughout the world.