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JANSR2N3637L, Microchip Technology, Discrete Semiconductor Products~Transistors - Bipolar (BJT) - Single, PNP TRANSISTOR
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Product Specifications:
MfrPart.: JANSR2N3637LMfr: Microchip TechnologyDescription: PNP TRANSISTORProduct Category: Discrete Semiconductor Products~Transistors - Bipolar (BJT) - SinglePackage: BulkSeries: Military, MIL-PRF-19500/357PartStatus: ActiveTransistorType: PNPCurrent-Collector(Ic)(Max): 1 AVoltage-CollectorEmitterBreakdown(Max): 175 VVceSaturation(Max)@IbIc: 600mV @ 5mA, 50mACurrent-CollectorCutoff(Max): 10µA (ICBO)DCCurrentGain(hFE)(Min)@IcVce: 100 @ 10mA, 10VPower-Max: 1 WFrequency-Transition: -OperatingTemperature: -65°C ~ 200°C (TJ)MountingType: Through HolePackage/Case: TO-205AA, TO-5-3 Metal CanJANSR2N3637L | Microchip Technology | NHE Electronics
JANSR2N3637L were obtained directly from authorized Microchip Technology distributors and other trusted sources throughout the world.