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MT29E4T08EYHBBG9-3ES:B, Micron Technology, Integrated Circuits (ICs)~Memory, IC FLASH 4TB PARALLEL 333MHZ

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Product Attributes：

Part Number: MT29E4T08EYHBBG9-3ES:B

Manufacturer: Micron Technology

Description: IC FLASH 4TB PARALLEL 333MHZ

Category: Integrated Circuits (ICs)~Memory

MT29E4T08EYHBBG9-3ES:B Datasheet (PDF)

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Product Specifications：

MfrPart.: MT29E4T08EYHBBG9-3ES:B

Mfr: Micron Technology Inc.

Description: IC FLASH 4TB PARALLEL 333MHZ

Product Category: Integrated Circuits (ICs)~Memory

Package: Tray

Series: -

PartStatus: Obsolete

MemoryType: Non-Volatile

MemoryFormat: FLASH

Technology: FLASH - NAND

MemorySize: 4Tb (512G x 8)

MemoryInterface: Parallel

ClockFrequency: 333 MHz

WriteCycleTime-WordPage: -

AccessTime: -

Voltage-Supply: 2.5V ~ 3.6V

OperatingTemperature: 0°C ~ 70°C (TA)

MountingType: -

Package/Case: -

MT29E4T08EYHBBG9-3ES:B | Micron Technology | NHE Electronics

MT29E4T08EYHBBG9-3ES:B were obtained directly from authorized Micron Technology distributors and other trusted sources throughout the world.

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