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    MT29E512G08CEHBBJ4-3ES:B TR, Micron Technology, Integrated Circuits (ICs)~Memory, IC FLASH 512GBIT PAR 132VBGA
    MT29E512G08CEHBBJ4-3ES:B TR Images
    MT29E512G08CEHBBJ4-3ES:B TR Images
    Product Attributes：
  • Part Number: MT29E512G08CEHBBJ4-3ES:B TR
  • Manufacturer: Micron Technology
  • Description: IC FLASH 512GBIT PAR 132VBGA
  • Category: Integrated Circuits (ICs)~Memory
  • MT29E512G08CEHBBJ4-3ES:B TR Datasheet (PDF)
  • Order with confidence, there are no lead times for in-stock products.
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    Product Specifications：
  • MfrPart.: MT29E512G08CEHBBJ4-3ES:B TR
  • Mfr: Micron Technology Inc.
  • Description: IC FLASH 512GBIT PAR 132VBGA
  • Product Category: Integrated Circuits (ICs)~Memory
  • Package: Tape & Reel (TR)
  • Series: -
  • PartStatus: Active
  • MemoryType: Non-Volatile
  • MemoryFormat: FLASH
  • Technology: FLASH - NAND
  • MemorySize: 512Gb (64G x 8)
  • MemoryInterface: Parallel
  • ClockFrequency: 333 MHz
  • WriteCycleTime-WordPage: -
  • AccessTime: -
  • Voltage-Supply: 2.5V ~ 3.6V
  • OperatingTemperature: 0°C ~ 70°C (TA)
  • MountingType: Surface Mount
  • Package/Case: 132-VBGA
  • MT29E512G08CEHBBJ4-3ES:B TR | Micron Technology | NHE Electronics
    • MT29E512G08CEHBBJ4-3ES:B TR were obtained directly from authorized Micron Technology distributors and other trusted sources throughout the world.
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