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MT29F4T08EYHBBG9-3RES:B TR, Micron Technology, Integrated Circuits (ICs)~Memory, IC FLASH 4TB PARALLEL 333MHZ
MT29F4T08EYHBBG9-3RES:B TR Images
IC FLASH RAM 4GBIT PAR 137VFBGA
IC DRAM 1GBIT PARALLEL 66TSOP
IC FLASH 128MBIT PARALLEL 56TSOP
CACHE SRAM, 512KX36, 5NS PQFP100
IC DRAM 2GBIT PARALLEL 78FBGA
Product Specifications:
MfrPart.: MT29F4T08EYHBBG9-3RES:B TRMfr: Micron Technology Inc.Description: IC FLASH 4TB PARALLEL 333MHZProduct Category: Integrated Circuits (ICs)~MemoryPackage: Tape & Reel (TR)Series: -PartStatus: ActiveMemoryType: Non-VolatileMemoryFormat: FLASHTechnology: FLASH - NANDMemorySize: 4Tb (512G x 8)MemoryInterface: ParallelClockFrequency: 333 MHzWriteCycleTime-WordPage: -AccessTime: -Voltage-Supply: 2.5V ~ 3.6VOperatingTemperature: 0°C ~ 70°C (TA)MountingType: -Package/Case: -MT29F4T08EYHBBG9-3RES:B TR | Micron Technology | NHE Electronics
MT29F4T08EYHBBG9-3RES:B TR were obtained directly from authorized Micron Technology distributors and other trusted sources throughout the world.