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2SC3583-T1B-A, Renesas Electronics, Discrete Semiconductor Products~Transistors - Bipolar (BJT) - RF, 2SC3583 - MD
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Product Specifications:
MfrPart.: 2SC3583-T1B-AMfr: Renesas Electronics America IncDescription: 2SC3583 - MDProduct Category: Discrete Semiconductor Products~Transistors - Bipolar (BJT) - RFPackage: BulkSeries: -PartStatus: ObsoleteTransistorType: NPNVoltage-CollectorEmitterBreakdown(Max): 10VFrequency-Transition: 9GHzNoiseFigure(dBTyp@f): 1.2dB @ 1GHzGain: 13dBPower-Max: 200mWDCCurrentGain(hFE)(Min)@IcVce: 50 @ 20mA, 8VCurrent-Collector(Ic)(Max): 65mAOperatingTemperature: 150°C (TJ)MountingType: Surface MountPackage/Case: TO-236-3, SC-59, SOT-23-32SC3583-T1B-A | Renesas Electronics | NHE Electronics
2SC3583-T1B-A were obtained directly from authorized Renesas Electronics distributors and other trusted sources throughout the world.