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H5N2305P-E, Renesas Electronics, Discrete Semiconductor Products~Transistors - Bipolar (BJT) - Single, POWER FIELD-EFFECT TRANSISTOR
Product Attributes：
Part Number: H5N2305P-E
Manufacturer: Renesas Electronics
Description: POWER FIELD-EFFECT TRANSISTOR
Category: Discrete Semiconductor Products~Transistors - Bipolar (BJT) - Single
H5N2305P-E Datasheet (PDF)
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Product Specifications：
MfrPart.: H5N2305P-EMfr: Renesas Electronics America IncDescription: POWER FIELD-EFFECT TRANSISTORProduct Category: Discrete Semiconductor Products~Transistors - Bipolar (BJT) - SinglePackage: BulkSeries: *PartStatus: ActiveTransistorType: -Current-Collector(Ic)(Max): -Voltage-CollectorEmitterBreakdown(Max): -VceSaturation(Max)@IbIc: -Current-CollectorCutoff(Max): -DCCurrentGain(hFE)(Min)@IcVce: -Power-Max: -Frequency-Transition: -OperatingTemperature: -MountingType: -Package/Case: -H5N2305P-E | Renesas Electronics | NHE Electronics
H5N2305P-E were obtained directly from authorized Renesas Electronics distributors and other trusted sources throughout the world.
