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    NP109N055PUJ-E1B-AY, Renesas Electronics, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 55V 110A TO263
    NP109N055PUJ-E1B-AY Images
    NP109N055PUJ-E1B-AY Images
    Product Attributes：
  • Part Number: NP109N055PUJ-E1B-AY
  • Manufacturer: Renesas Electronics
  • Description: MOSFET N-CH 55V 110A TO263
  • Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
  • NP109N055PUJ-E1B-AY Datasheet (PDF)
  • Order with confidence, there are no lead times for in-stock products.
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    Product Specifications：
  • MfrPart.: NP109N055PUJ-E1B-AY
  • Mfr: Renesas Electronics America Inc
  • Description: MOSFET N-CH 55V 110A TO263
  • Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
  • Package: Tape & Reel (TR)
  • Series: -
  • PartStatus: Obsolete
  • FETType: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • DraintoSourceVoltage(Vdss): 55 V
  • Current-ContinuousDrain(Id)@25°C: 110A (Ta)
  • DriveVoltage(MaxRdsOnMinRdsOn): 10V
  • RdsOn(Max)@IdVgs: 3.2mOhm @ 55A, 10V
  • Vgs(th)(Max)@Id: 4V @ 250µA
  • GateCharge(Qg)(Max)@Vgs: 180 nC @ 10 V
  • Vgs(Max): ±20V
  • InputCapacitance(Ciss)(Max)@Vds: 10350 pF @ 25 V
  • FETFeature: -
  • PowerDissipation(Max): 1.8W (Ta), 220W (Tc)
  • OperatingTemperature: 175°C (TJ)
  • MountingType: Surface Mount
  • SupplierDevicePackage: TO-263
  • NP109N055PUJ-E1B-AY | Renesas Electronics | NHE Electronics
    • NP109N055PUJ-E1B-AY were obtained directly from authorized Renesas Electronics distributors and other trusted sources throughout the world.
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