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    RJK2006DPE-00#J3, Renesas Electronics, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 200V 40A 4LDPAK
    RJK2006DPE-00#J3 Images
    RJK2006DPE-00#J3 Images
    Product Attributes：
  • Part Number: RJK2006DPE-00#J3
  • Manufacturer: Renesas Electronics
  • Description: MOSFET N-CH 200V 40A 4LDPAK
  • Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
  • RJK2006DPE-00#J3 Datasheet (PDF)
  • Order with confidence, there are no lead times for in-stock products.
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    Product Specifications：
  • MfrPart.: RJK2006DPE-00#J3
  • Mfr: Renesas Electronics America Inc
  • Description: MOSFET N-CH 200V 40A 4LDPAK
  • Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
  • Package: Tape & Reel (TR)
  • Series: -
  • PartStatus: Active
  • FETType: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • DraintoSourceVoltage(Vdss): 200 V
  • Current-ContinuousDrain(Id)@25°C: 40A (Ta)
  • DriveVoltage(MaxRdsOnMinRdsOn): 10V
  • RdsOn(Max)@IdVgs: 59mOhm @ 20A, 10V
  • Vgs(th)(Max)@Id: -
  • GateCharge(Qg)(Max)@Vgs: 43 nC @ 10 V
  • Vgs(Max): ±30V
  • InputCapacitance(Ciss)(Max)@Vds: 1800 pF @ 25 V
  • FETFeature: -
  • PowerDissipation(Max): 100W (Tc)
  • OperatingTemperature: 150°C (TJ)
  • MountingType: Surface Mount
  • SupplierDevicePackage: LDPAK
  • RJK2006DPE-00#J3 | Renesas Electronics | NHE Electronics
    • RJK2006DPE-00#J3 were obtained directly from authorized Renesas Electronics distributors and other trusted sources throughout the world.
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