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    STGYA120M65DF2, STMicroelectronics, Discrete Semiconductor Products~Transistors - IGBTs - Single, TRENCH GATE FIELD-STOP IGBT, M S
    STGYA120M65DF2 Images
    STGYA120M65DF2 Images
    Product Attributes：
  • Part Number: STGYA120M65DF2
  • Manufacturer: STMicroelectronics
  • Description: TRENCH GATE FIELD-STOP IGBT, M S
  • Category: Discrete Semiconductor Products~Transistors - IGBTs - Single
  • STGYA120M65DF2 Datasheet (PDF)
  • Order with confidence, there are no lead times for in-stock products.
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    Product Specifications：
  • MfrPart.: STGYA120M65DF2
  • Mfr: STMicroelectronics
  • Description: TRENCH GATE FIELD-STOP IGBT, M S
  • Product Category: Discrete Semiconductor Products~Transistors - IGBTs - Single
  • Package: Tube
  • Series: M
  • PartStatus: Active
  • IGBTType: NPT, Trench Field Stop
  • Voltage-CollectorEmitterBreakdown(Max): 650 V
  • Current-Collector(Ic)(Max): 160 A
  • Current-CollectorPulsed(Icm): 360 A
  • Vce(on)(Max)@VgeIc: 1.95V @ 15V, 120A
  • Power-Max: 625 W
  • SwitchingEnergy: 1.8mJ (on), 4.41mJ (off)
  • InputType: Standard
  • GateCharge: 420 nC
  • Td(on/off)@25°C: 66ns/185ns
  • TestCondition: 400V, 120A, 4.7Ohm, 15V
  • ReverseRecoveryTime(trr): 202 ns
  • OperatingTemperature: -55°C ~ 175°C (TJ)
  • MountingType: Through Hole
  • Package/Case: TO-247-3 Exposed Pad
  • STGYA120M65DF2 | STMicroelectronics | NHE Electronics
    • STGYA120M65DF2 were obtained directly from authorized STMicroelectronics distributors and other trusted sources throughout the world.
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