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    1N5402GHB0G, Taiwan Semiconductor, Discrete Semiconductor Products~Diodes - Rectifiers - Single, DIODE GEN PURP 200V 3A DO201AD
    1N5402GHB0G Images
    1N5402GHB0G Images
    Product Attributes：
  • Part Number: 1N5402GHB0G
  • Manufacturer: Taiwan Semiconductor
  • Description: DIODE GEN PURP 200V 3A DO201AD
  • Category: Discrete Semiconductor Products~Diodes - Rectifiers - Single
  • 1N5402GHB0G Datasheet (PDF)
  • Order with confidence, there are no lead times for in-stock products.
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    Product Specifications：
  • Manufacturer Product Number: 1N5402GHB0G
  • Mfr: Taiwan Semiconductor Corporation
  • Detailed Description: DIODE GEN PURP 200V 3A DO201AD
  • Product Category: Discrete Semiconductor Products~Diodes - Rectifiers - Single
  • Package: Bulk
  • Series: Automotive, AEC-Q101
  • Part Status: Active
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 µA @ 200 V
  • Capacitance @ Vr, F: 25pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Operating Temperature - Junction: -55°C ~ 150°C
  • 1N5402GHB0G | Taiwan Semiconductor | NHE Electronics
    • 1N5402GHB0G were obtained directly from authorized Taiwan Semiconductor distributors and other trusted sources throughout the world.
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