Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
1N5406G B0G, Taiwan Semiconductor, Discrete Semiconductor Products~Diodes - Rectifiers - Single, DIODE GEN PURP 600V 3A DO201AD
Product Attributes：
Part Number: 1N5406G B0G
Manufacturer: Taiwan Semiconductor
Description: DIODE GEN PURP 600V 3A DO201AD
Category: Discrete Semiconductor Products~Diodes - Rectifiers - Single
1N5406G B0G Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
BRIDGE RECT 1PHASE 800V 2A DBLS
DIODE ZENER 33V 1W SUB SMA
DIODE GEN PURP 600V 15A DO214AB
DIODE SCHOTTKY 40V 2A DO214AA
TVS DIODE 120VWM 193VC DO214AA
TVS DIODE 22VWM 35.5VC DO214AC
Product Specifications：
Manufacturer Product Number: 1N5406G B0GMfr: Taiwan Semiconductor CorporationDetailed Description: DIODE GEN PURP 600V 3A DO201ADProduct Category: Discrete Semiconductor Products~Diodes - Rectifiers - SinglePackage: BulkSeries: -Part Status: ActiveDiode Type: StandardVoltage - DC Reverse (Vr) (Max): 600 VCurrent - Average Rectified (Io): 3AVoltage - Forward (Vf) (Max) @ If: 1 V @ 3 ASpeed: Standard Recovery >500ns, > 200mA (Io)Reverse Recovery Time (trr): -Current - Reverse Leakage @ Vr: 5 µA @ 600 VCapacitance @ Vr, F: 25pF @ 4V, 1MHzMounting Type: Through HolePackage / Case: DO-201AD, AxialOperating Temperature - Junction: -55°C ~ 150°C1N5406G B0G | Taiwan Semiconductor | NHE Electronics
1N5406G B0G were obtained directly from authorized Taiwan Semiconductor distributors and other trusted sources throughout the world.
