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1N5406GHB0G, Taiwan Semiconductor, Discrete Semiconductor Products~Diodes - Rectifiers - Single, DIODE GEN PURP 600V 3A DO201AD
Product Attributes：
Part Number: 1N5406GHB0G
Manufacturer: Taiwan Semiconductor
Description: DIODE GEN PURP 600V 3A DO201AD
Category: Discrete Semiconductor Products~Diodes - Rectifiers - Single
1N5406GHB0G Datasheet (PDF)
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Product Specifications：
Manufacturer Product Number: 1N5406GHB0GMfr: Taiwan Semiconductor CorporationDetailed Description: DIODE GEN PURP 600V 3A DO201ADProduct Category: Discrete Semiconductor Products~Diodes - Rectifiers - SinglePackage: BulkSeries: Automotive, AEC-Q101Part Status: ActiveDiode Type: StandardVoltage - DC Reverse (Vr) (Max): 600 VCurrent - Average Rectified (Io): 3AVoltage - Forward (Vf) (Max) @ If: 1 V @ 3 ASpeed: Standard Recovery >500ns, > 200mA (Io)Reverse Recovery Time (trr): -Current - Reverse Leakage @ Vr: 5 µA @ 600 VCapacitance @ Vr, F: 25pF @ 4V, 1MHzMounting Type: Through HolePackage / Case: DO-201AD, AxialOperating Temperature - Junction: -55°C ~ 150°C1N5406GHB0G | Taiwan Semiconductor | NHE Electronics
1N5406GHB0G were obtained directly from authorized Taiwan Semiconductor distributors and other trusted sources throughout the world.
