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1N5408GHB0G, Taiwan Semiconductor, Discrete Semiconductor Products~Diodes - Rectifiers - Single, DIODE GEN PURP 3A DO201AD
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Product Specifications:
Manufacturer Product Number: 1N5408GHB0GMfr: Taiwan Semiconductor CorporationDetailed Description: DIODE GEN PURP 3A DO201ADProduct Category: Discrete Semiconductor Products~Diodes - Rectifiers - SinglePackage: BulkSeries: Automotive, AEC-Q101Part Status: ActiveDiode Type: StandardVoltage - DC Reverse (Vr) (Max): -Current - Average Rectified (Io): 3AVoltage - Forward (Vf) (Max) @ If: 1 V @ 3 ASpeed: Standard Recovery >500ns, > 200mA (Io)Reverse Recovery Time (trr): -Current - Reverse Leakage @ Vr: 5 µA @ 1000 VCapacitance @ Vr, F: 25pF @ 4V, 1MHzMounting Type: Through HolePackage / Case: DO-201AD, AxialOperating Temperature - Junction: -55°C ~ 150°C1N5408GHB0G | Taiwan Semiconductor | NHE Electronics
1N5408GHB0G were obtained directly from authorized Taiwan Semiconductor distributors and other trusted sources throughout the world.