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ES3JBHM4G, Taiwan Semiconductor, Discrete Semiconductor Products~Diodes - Rectifiers - Single, DIODE GEN PURP 600V 3A DO214AA
Product Attributes：
Part Number: ES3JBHM4G
Manufacturer: Taiwan Semiconductor
Description: DIODE GEN PURP 600V 3A DO214AA
Category: Discrete Semiconductor Products~Diodes - Rectifiers - Single
ES3JBHM4G Datasheet (PDF)
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Product Specifications：
Manufacturer Product Number: ES3JBHM4GMfr: Taiwan Semiconductor CorporationDetailed Description: DIODE GEN PURP 600V 3A DO214AAProduct Category: Discrete Semiconductor Products~Diodes - Rectifiers - SinglePackage: Tape & Reel (TR)Series: Automotive, AEC-Q101Part Status: ActiveDiode Type: StandardVoltage - DC Reverse (Vr) (Max): 600 VCurrent - Average Rectified (Io): 3AVoltage - Forward (Vf) (Max) @ If: 1.45 V @ 3 ASpeed: Fast Recovery =< 500ns, > 200mA (Io)Reverse Recovery Time (trr): 35 nsCurrent - Reverse Leakage @ Vr: 10 µA @ 600 VCapacitance @ Vr, F: 34pF @ 4V, 1MHzMounting Type: Surface MountPackage / Case: DO-214AA, SMBOperating Temperature - Junction: -55°C ~ 150°CES3JBHM4G | Taiwan Semiconductor | NHE Electronics
ES3JBHM4G were obtained directly from authorized Taiwan Semiconductor distributors and other trusted sources throughout the world.
