Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
ES3JBHR5G, Taiwan Semiconductor, Discrete Semiconductor Products~Diodes - Rectifiers - Single, DIODE GEN PURP 600V 3A DO214AA
Product Attributes:
Part Number: ES3JBHR5G
Manufacturer: Taiwan Semiconductor
Description: DIODE GEN PURP 600V 3A DO214AA
Category: Discrete Semiconductor Products~Diodes - Rectifiers - Single
ES3JBHR5G Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
MOSFET N-CHANNEL 60V 300MA TO92
TVS DIODE 7VWM 12VC DO214AC
TVS DIODE 110VWM 196VC DO214AC
DIODE ZENER 56V 2W DO204AC
DIODE GEN PURP 100V 1A SUB SMA
Product Specifications:
Manufacturer Product Number: ES3JBHR5GMfr: Taiwan Semiconductor CorporationDetailed Description: DIODE GEN PURP 600V 3A DO214AAProduct Category: Discrete Semiconductor Products~Diodes - Rectifiers - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: Automotive, AEC-Q101Part Status: ActiveDiode Type: StandardVoltage - DC Reverse (Vr) (Max): 600 VCurrent - Average Rectified (Io): 3AVoltage - Forward (Vf) (Max) @ If: 1.45 V @ 3 ASpeed: Fast Recovery =< 500ns, > 200mA (Io)Reverse Recovery Time (trr): 35 nsCurrent - Reverse Leakage @ Vr: 10 µA @ 600 VCapacitance @ Vr, F: 34pF @ 4V, 1MHzMounting Type: Surface MountPackage / Case: DO-214AA, SMBOperating Temperature - Junction: -55°C ~ 150°CES3JBHR5G | Taiwan Semiconductor | NHE Electronics
ES3JBHR5G were obtained directly from authorized Taiwan Semiconductor distributors and other trusted sources throughout the world.