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    TSM250NB06LDCR RLG, Taiwan Semiconductor, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Arrays, DUAL N-CHANNEL POWER MOSFET 60V
    TSM250NB06LDCR RLG Images
    TSM250NB06LDCR RLG Images
    Product Attributes：
  • Part Number: TSM250NB06LDCR RLG
  • Manufacturer: Taiwan Semiconductor
  • Description: DUAL N-CHANNEL POWER MOSFET 60V
  • Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Arrays
  • TSM250NB06LDCR RLG Datasheet (PDF)
  • Order with confidence, there are no lead times for in-stock products.
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    Product Specifications：
  • MfrPart.: TSM250NB06LDCR RLG
  • Mfr: Taiwan Semiconductor Corporation
  • Description: DUAL N-CHANNEL POWER MOSFET 60V
  • Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Arrays
  • Package: 2500
  • Series: Tape & Reel (TR),Cut Tape (CT)
  • PartStatus: -
  • FETType: Active
  • FETFeature: 2 N-Channel (Dual)
  • DraintoSourceVoltage(Vdss): Standard
  • Current-ContinuousDrain(Id)@25°C: 60V
  • RdsOn(Max)@IdVgs: 6A (Ta), 29A (Tc)
  • Vgs(th)(Max)@Id: 25mOhm @ 6A, 10V
  • GateCharge(Qg)(Max)@Vgs: 2.5V @ 250µA
  • InputCapacitance(Ciss)(Max)@Vds: 23nC @ 10V
  • Power-Max: 1314pF @ 30V
  • OperatingTemperature: 2W (Ta), 48W (Tc)
  • MountingType: -55°C ~ 150°C (TJ)
  • Package/Case: Surface Mount
  • TSM250NB06LDCR RLG | Taiwan Semiconductor | NHE Electronics
    • TSM250NB06LDCR RLG were obtained directly from authorized Taiwan Semiconductor distributors and other trusted sources throughout the world.
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