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    TSM60NB099PW C1G, Taiwan Semiconductor, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CHANNEL 600V 38A TO247
    TSM60NB099PW C1G Images
    TSM60NB099PW C1G Images
    Product Attributes：
  • Part Number: TSM60NB099PW C1G
  • Manufacturer: Taiwan Semiconductor
  • Description: MOSFET N-CHANNEL 600V 38A TO247
  • Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
  • TSM60NB099PW C1G Datasheet (PDF)
  • Order with confidence, there are no lead times for in-stock products.
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    Product Specifications：
  • MfrPart.: TSM60NB099PW C1G
  • Mfr: Taiwan Semiconductor Corporation
  • Description: MOSFET N-CHANNEL 600V 38A TO247
  • Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
  • Package: Tube
  • Series: -
  • PartStatus: Active
  • FETType: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • DraintoSourceVoltage(Vdss): 600 V
  • Current-ContinuousDrain(Id)@25°C: 38A (Tc)
  • DriveVoltage(MaxRdsOnMinRdsOn): 10V
  • RdsOn(Max)@IdVgs: 99mOhm @ 11.7A, 10V
  • Vgs(th)(Max)@Id: 4V @ 250µA
  • GateCharge(Qg)(Max)@Vgs: 62 nC @ 10 V
  • Vgs(Max): ±30V
  • InputCapacitance(Ciss)(Max)@Vds: 2587 pF @ 100 V
  • FETFeature: -
  • PowerDissipation(Max): 329W (Tc)
  • OperatingTemperature: -55°C ~ 150°C (TJ)
  • MountingType: Through Hole
  • SupplierDevicePackage: TO-247
  • TSM60NB099PW C1G | Taiwan Semiconductor | NHE Electronics
    • TSM60NB099PW C1G were obtained directly from authorized Taiwan Semiconductor distributors and other trusted sources throughout the world.
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