Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
TSM60NB900CH C5G, Taiwan Semiconductor, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CHANNEL 600V 4A TO251
DIODE GEN PURP 600V 5A DO214AA
TVS DIODE 160VWM 259VC SMC
TVS DIODE 12.8VWM 21.2VC DO214AC
BRIDGE RECT 1P 800V 50A TS-6P
DIODE GEN PURP 50V 20A TO220AB
TVS DIODE 17.1VWM 27.7VC DO214AB
Product Specifications:
MfrPart.: TSM60NB900CH C5GMfr: Taiwan Semiconductor CorporationDescription: MOSFET N-CHANNEL 600V 4A TO251Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: TubeSeries: -PartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 600 VCurrent-ContinuousDrain(Id)@25°C: 4A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 10VRdsOn(Max)@IdVgs: 900mOhm @ 1.2A, 10VVgs(th)(Max)@Id: 4V @ 250µAGateCharge(Qg)(Max)@Vgs: 9.6 nC @ 10 VVgs(Max): ±30VInputCapacitance(Ciss)(Max)@Vds: 315 pF @ 100 VFETFeature: -PowerDissipation(Max): 36.8W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Through HoleSupplierDevicePackage: TO-251 (IPAK)TSM60NB900CH C5G | Taiwan Semiconductor | NHE Electronics
TSM60NB900CH C5G were obtained directly from authorized Taiwan Semiconductor distributors and other trusted sources throughout the world.