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CSD25211W1015, Texas Instruments, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET P-CH 20V 3.2A 6DSBGA
Product Attributes:
Part Number: CSD25211W1015
Manufacturer: Texas Instruments (TI)
Description: MOSFET P-CH 20V 3.2A 6DSBGA
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
CSD25211W1015 Datasheet (PDF)
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IC BUFFER INVERT 5.5V 20SOIC
IC REG CTRLR MULT TOPOLOGY 18DIP
IC FF D-TYPE SNGL 6BIT 16DIP
DIGITAL SIGNAL PROCESSOR, 32-BIT
IC DATA SELECT/MUX 1X8:1 16TSSOP
DGTL ISO 5.7KV GATE DRVR 16SOIC
Product Specifications:
MfrPart.: CSD25211W1015Mfr: Texas InstrumentsDescription: MOSFET P-CH 20V 3.2A 6DSBGAProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: NexFET™PartStatus: ActiveFETType: P-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 20 VCurrent-ContinuousDrain(Id)@25°C: 3.2A (Ta)DriveVoltage(MaxRdsOnMinRdsOn): 2.5V, 4.5VRdsOn(Max)@IdVgs: 33mOhm @ 1.5A, 4.5VVgs(th)(Max)@Id: 1.1V @ 250µAGateCharge(Qg)(Max)@Vgs: 4.1 nC @ 4.5 VVgs(Max): -6VInputCapacitance(Ciss)(Max)@Vds: 570 pF @ 10 VFETFeature: -PowerDissipation(Max): 1W (Ta)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: 6-DSBGA (1x1.5)CSD25211W1015 | Texas Instruments | NHE Electronics
CSD25211W1015 were obtained directly from authorized Texas Instruments distributors and other trusted sources throughout the world.