Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SI2300DS-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 30V 3.6A SOT23-3
Product Attributes:
Part Number: SI2300DS-T1-GE3
Manufacturer: Vishay
Description: MOSFET N-CH 30V 3.6A SOT23-3
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SI2300DS-T1-GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
FIXED IND 2.7UH 385MA 1.2 OHM TH
TVS DIODE 25.6VWM 41.4VC DO214AA
MOSFET N-CH 400V 10A D2PAK
TVS DIODE 128VWM 207VC SMC
DIODE ZENER 22V 500MW DO35
DIODE ZENER 24V 200MW SOD323
Product Specifications:
MfrPart.: SI2300DS-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 30V 3.6A SOT23-3Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET®PartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 30 VCurrent-ContinuousDrain(Id)@25°C: 3.6A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 2.5V, 4.5VRdsOn(Max)@IdVgs: 68mOhm @ 2.9A, 4.5VVgs(th)(Max)@Id: 1.5V @ 250µAGateCharge(Qg)(Max)@Vgs: 10 nC @ 10 VVgs(Max): ±12VInputCapacitance(Ciss)(Max)@Vds: 320 pF @ 15 VFETFeature: -PowerDissipation(Max): 1.1W (Ta), 1.7W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: SOT-23-3 (TO-236)SI2300DS-T1-GE3 | Vishay | NHE Electronics
SI2300DS-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.