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SI2335DS-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET P-CH 12V 3.2A SOT23-3
Product Attributes：
Part Number: SI2335DS-T1-GE3
Manufacturer: Vishay
Description: MOSFET P-CH 12V 3.2A SOT23-3
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SI2335DS-T1-GE3 Datasheet (PDF)
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Product Specifications：
MfrPart.: SI2335DS-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET P-CH 12V 3.2A SOT23-3Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR)Series: TrenchFET®PartStatus: ObsoleteFETType: P-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 12 VCurrent-ContinuousDrain(Id)@25°C: 3.2A (Ta)DriveVoltage(MaxRdsOnMinRdsOn): 1.8V, 4.5VRdsOn(Max)@IdVgs: 51mOhm @ 4A, 4.5VVgs(th)(Max)@Id: 450mV @ 250µA (Min)GateCharge(Qg)(Max)@Vgs: 15 nC @ 4.5 VVgs(Max): ±8VInputCapacitance(Ciss)(Max)@Vds: 1225 pF @ 6 VFETFeature: -PowerDissipation(Max): 750mW (Ta)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: SOT-23-3 (TO-236)SI2335DS-T1-GE3 | Vishay | NHE Electronics
SI2335DS-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
