Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SI2337DS-T1-E3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET P-CH 80V 2.2A SOT23-3
Product Attributes：
Part Number: SI2337DS-T1-E3
Manufacturer: Vishay
Description: MOSFET P-CH 80V 2.2A SOT23-3
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SI2337DS-T1-E3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
TVS DIODE 10VWM 18.8VC DO215AB
DIODE ZENER 3.9V 500MW MICROMELF
VARISTOR 100V 1.2KA DISC 9MM
FIXED IND 1.2UH 30A 2.5 MOHM SMD
DIODE ZENER 5.6V 225MW SOT23-3
DIODE ARRAY SCHOTTKY 40V TO220AB
Product Specifications：
MfrPart.: SI2337DS-T1-E3Mfr: Vishay SiliconixDescription: MOSFET P-CH 80V 2.2A SOT23-3Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET®PartStatus: ActiveFETType: P-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 80 VCurrent-ContinuousDrain(Id)@25°C: 2.2A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 6V, 10VRdsOn(Max)@IdVgs: 270mOhm @ 1.2A, 10VVgs(th)(Max)@Id: 4V @ 250µAGateCharge(Qg)(Max)@Vgs: 17 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 500 pF @ 40 VFETFeature: -PowerDissipation(Max): 760mW (Ta), 2.5W (Tc)OperatingTemperature: -50°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: SOT-23-3 (TO-236)SI2337DS-T1-E3 | Vishay | NHE Electronics
SI2337DS-T1-E3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
