Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SI2342DS-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 8V 6A SOT-23
Product Attributes:
Part Number: SI2342DS-T1-GE3
Manufacturer: Vishay
Description: MOSFET N-CH 8V 6A SOT-23
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SI2342DS-T1-GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
FIXED IND 4.7UH 4A 8 MOHM TH
DIODE ZENER 3.3V 200MW SOD323
DIODE GEN PURP 600V 1A MPG06
DIODE ZENER 6.2V 500MW SOD80
TVS DIODE 70VWM 113VC P600
DIODE GEN PURP 100V 50A B47
Product Specifications:
MfrPart.: SI2342DS-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 8V 6A SOT-23Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET®PartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 8 VCurrent-ContinuousDrain(Id)@25°C: 6A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 1.2V, 4.5VRdsOn(Max)@IdVgs: 17mOhm @ 7.2A, 4.5VVgs(th)(Max)@Id: 800mV @ 250µAGateCharge(Qg)(Max)@Vgs: 15.8 nC @ 4.5 VVgs(Max): ±5VInputCapacitance(Ciss)(Max)@Vds: 1070 pF @ 4 VFETFeature: -PowerDissipation(Max): 2.5W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: SOT-23-3 (TO-236)SI2342DS-T1-GE3 | Vishay | NHE Electronics
SI2342DS-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.