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SI2369BDS-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET P-CH 30V 5.6A/7.5A SOT23
Product Attributes：
Part Number: SI2369BDS-T1-GE3
Manufacturer: Vishay
Description: MOSFET P-CH 30V 5.6A/7.5A SOT23
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SI2369BDS-T1-GE3 Datasheet (PDF)
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Product Specifications：
MfrPart.: SI2369BDS-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET P-CH 30V 5.6A/7.5A SOT23Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET® Gen IVPartStatus: ActiveFETType: P-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 30 VCurrent-ContinuousDrain(Id)@25°C: 5.6A (Ta), 7.5A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10VRdsOn(Max)@IdVgs: 27mOhm @ 5A, 10VVgs(th)(Max)@Id: 2.2V @ 250µAGateCharge(Qg)(Max)@Vgs: 19.5 nC @ 10 VVgs(Max): +16V, -20VInputCapacitance(Ciss)(Max)@Vds: 745 pF @ 15 VFETFeature: -PowerDissipation(Max): 1.3W (Ta), 2.5W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: SOT-23-3 (TO-236)SI2369BDS-T1-GE3 | Vishay | NHE Electronics
SI2369BDS-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
