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SI3129DV-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, P-CHANNEL 80 V (D-S) MOSFET TSOP
Product Attributes:
Part Number: SI3129DV-T1-GE3
Manufacturer: Vishay
Description: P-CHANNEL 80 V (D-S) MOSFET TSOP
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SI3129DV-T1-GE3 Datasheet (PDF)
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Product Specifications:
MfrPart.: SI3129DV-T1-GE3Mfr: Vishay SiliconixDescription: P-CHANNEL 80 V (D-S) MOSFET TSOPProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET®PartStatus: ActiveFETType: P-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 80 VCurrent-ContinuousDrain(Id)@25°C: 3.8A (Ta), 5.4A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10VRdsOn(Max)@IdVgs: 82.7mOhm @ 3.8A, 10VVgs(th)(Max)@Id: 2.5V @ 250µAGateCharge(Qg)(Max)@Vgs: 18 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 805 pF @ 40 VFETFeature: -PowerDissipation(Max): 2W (Ta), 4.2W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: 6-TSOPSI3129DV-T1-GE3 | Vishay | NHE Electronics
SI3129DV-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.