Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SI3457BDV-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET P-CH 30V 3.7A 6TSOP
Product Attributes:
Part Number: SI3457BDV-T1-GE3
Manufacturer: Vishay
Description: MOSFET P-CH 30V 3.7A 6TSOP
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SI3457BDV-T1-GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
DIODE GEN PURP 800V 165A MODULE
TVS DIODE 7.02VWM 12.1VC DO214AC
FIXED IND 220NH 2.3A 38 MOHM TH
TVS DIODE 10VWM 18.8VC DO218AB
DIODE SCHOTTKY 30V 200MA SOD523
DIODE ARRAY SCHOTTKY 45V D2PAK
Product Specifications:
MfrPart.: SI3457BDV-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET P-CH 30V 3.7A 6TSOPProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR)Series: TrenchFET®PartStatus: ObsoleteFETType: P-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 30 VCurrent-ContinuousDrain(Id)@25°C: 3.7A (Ta)DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10VRdsOn(Max)@IdVgs: 54mOhm @ 5A, 10VVgs(th)(Max)@Id: 3V @ 250µAGateCharge(Qg)(Max)@Vgs: 19 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: -FETFeature: -PowerDissipation(Max): 1.14W (Ta)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: 6-TSOPSI3457BDV-T1-GE3 | Vishay | NHE Electronics
SI3457BDV-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.