Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SI3460BDV-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 20V 8A 6TSOP
Product Attributes：
Part Number: SI3460BDV-T1-GE3
Manufacturer: Vishay
Description: MOSFET N-CH 20V 8A 6TSOP
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SI3460BDV-T1-GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
TVS DIODE 10VWM 18.8VC DO215AB
FIXED IND 150NH 3A 30 MOHM TH
DIODE ZENER 51V 500MW SOD80
TRIMMER 2K OHM 0.75W PC PIN SIDE
SFERNICE POTENTIOMETERS & TRIMME
DIODE SCHOTTKY 45V 40A TO220AC
Product Specifications：
MfrPart.: SI3460BDV-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 20V 8A 6TSOPProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET®PartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 20 VCurrent-ContinuousDrain(Id)@25°C: 8A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 1.8V, 4.5VRdsOn(Max)@IdVgs: 27mOhm @ 5.1A, 4.5VVgs(th)(Max)@Id: 1V @ 250µAGateCharge(Qg)(Max)@Vgs: 24 nC @ 8 VVgs(Max): ±8VInputCapacitance(Ciss)(Max)@Vds: 860 pF @ 10 VFETFeature: -PowerDissipation(Max): 2W (Ta), 3.5W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: 6-TSOPSI3460BDV-T1-GE3 | Vishay | NHE Electronics
SI3460BDV-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
