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SI3460DDV-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 20V 7.9A 6TSOP
Product Attributes：
Part Number: SI3460DDV-T1-GE3
Manufacturer: Vishay
Description: MOSFET N-CH 20V 7.9A 6TSOP
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SI3460DDV-T1-GE3 Datasheet (PDF)
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Product Specifications：
MfrPart.: SI3460DDV-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 20V 7.9A 6TSOPProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET®PartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 20 VCurrent-ContinuousDrain(Id)@25°C: 7.9A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 1.8V, 4.5VRdsOn(Max)@IdVgs: 28mOhm @ 5.1A, 4.5VVgs(th)(Max)@Id: 1V @ 250µAGateCharge(Qg)(Max)@Vgs: 18 nC @ 8 VVgs(Max): ±8VInputCapacitance(Ciss)(Max)@Vds: 666 pF @ 10 VFETFeature: -PowerDissipation(Max): 1.7W (Ta), 2.7W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: 6-TSOPSI3460DDV-T1-GE3 | Vishay | NHE Electronics
SI3460DDV-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
